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  1/8 april 2001 n high speed: t pd = 7.2 ns (typ.) at v cc =5v n low power dissipation: i cc =4 m a(max.) at t a =25 c n 50 w transmission line driving capability n symmetrical output impedance: |i oh |=i ol = 24ma (min) n balanced propagation delays: t plh @ t phl n operating voltage range: v cc (opr) = 2v to 5.5v n pin and function compatible with 74 series 14 n improved latch-up immunity description the 74act14 is an advanced high-speed cmos hex schmitt inverter fabricated with sub-micron silicon gate and double-layer metal wiring c 2 mos tecnology. the internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. the device is designed to interface directly high speed cmos systems with ttl, nmos and cmos output voltage levels. this together with its schmitt trigger function allows it to be used on line receivers with slow rise/fall input signals. all inputs and outputs are equipped with protec- tion circuits against static discharge, giving them 2kv esd immunity and transient excess voltage. 74act14 hex schmitt inverter pin connection and iec logic symbols order codes package tube t & r dip 74ACT14B sop 74act14m 74act14mtr tssop 74act14ttr tssop dip sop
74act14 2/8 input and output equivalent circuit pin description truth table absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. recommended operating conditions 1) v in from 0.8v to 2.0v pin no symbol name and function 1, 3, 5, 9, 11, 13 1a to 6a data inputs 2, 4, 6, 8, 10, 12 1y to 6y data outputs 7 gnd ground (0v) 14 v cc positive supply voltage ay lh hl symbol parameter value unit v cc supply voltage -0.5 to +7 v v i dc input voltage -0.5 to v cc + 0.5 v v o dc output voltage -0.5 to v cc + 0.5 v i ik dc input diode current 20 ma i ok dc output diode current 20 ma i o dc output current 50 ma i cc or i gnd dc v cc or ground current 300 ma t stg storage temperature -65 to +150 c t l lead temperature (10 sec) 300 c symbol parameter value unit v cc supply voltage 4.5 to 5.5 v v i input voltage 0 to v cc v v o output voltage 0 to v cc v t op operating temperature -55 to 125 c
74act14 3/8 dc specifications 1) maximum test duration 2ms, one output loaded at time 2) incident wave switching is guaranteed on transmission lines with impedances as low as 50 w ac electrical characteristics (c l = 50 pf, r l = 500 w , input t r =t f = 3ns) (*) voltage range is 5.0v 0.5v capacitive characteristics 1) c pd is defined as the value of the ic's internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average operating current can be obtained by the following equation. i cc(opr) =c pd xv cc xf in +i cc /6 (per gate) symbol parameter test condition value unit v cc (v) t a =25 c -40 to 85 c -55 to 125 c min. typ. max. min. max. min. max. v t+ high level input voltage 4.5 2.0 2.0 2.0 v 5.5 2.0 2.0 2.0 v t- low level input voltage 4.5 0.6 0.6 0.6 v 5.5 0.6 0.6 0.6 v h hysteresis voltage 4.5 0.4 1.4 0.4 1.4 0.4 1.4 v 5.5 0.4 1.5 0.4 1.5 0.4 1.5 v oh high level output voltage 4.5 i o =-50 m a 4.4 4.49 4.4 4.4 v 5.5 i o =-50 m a 5.4 5.49 5.4 5.4 4.5 i o =-24 ma 3.86 3.76 3.7 5.5 i o =-24 ma 4.86 4.76 4.7 v ol low level output voltage 4.5 i o =50 m a 0.001 0.1 0.1 0.1 v 5.5 i o =50 m a 0.001 0.1 0.1 0.1 4.5 i o =24 ma 0.36 0.44 0.5 5.5 i o =24 ma 0.36 0.44 0.5 i i input leakage cur- rent 5.5 v i =v cc or gnd 0.1 1 1 m a i cct max i cc /input 5.5 v i =v cc - 2.1v 0.6 1.5 1.6 ma i cc quiescent supply current 5.5 v i =v cc or gnd 44040 m a i old dynamic output current (note 1, 2) 5.5 v old = 1.65 v max 75 50 ma i ohd v ohd = 3.85 v min -75 -50 ma symbol parameter test condition value unit v cc (v) t a =25 c -40 to 85 c -55 to 125 c min. typ. max. min. max. min. max. t plh t phl propagation delay time 5.0 (*) 7.2 11.4 14.0 14.0 ns symbol parameter test condition value unit v cc (v) t a =25 c -40 to 85 c -55 to 125 c min. typ. max. min. max. min. max. c in input capacitance 5.0 5101010pf c pd power dissipation capacitance (note 1) 5.0 f in = 10mhz 30 pf
74act14 4/8 test circuit c l = 50pf or equivalent (includes jig and probe capacitance) r l =r 1 = 500 w or equivalent r t =z out of pulse generator (typically 50 w ) waveform: propagation delays (f=1mhz; 50% duty cycle)
74act14 5/8 dim. mm inch min. typ. max. min. typ. max. a1 0.51 0.020 b 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 d 20 0.787 e 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 f 7.1 0.280 i 5.1 0.201 l 3.3 0.130 z 1.27 2.54 0.050 0.100 p001a plastic dip-14 mechanical data
74act14 6/8 dim. mm inch min. typ. max. min. typ. max. a 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.5 0.019 c1 45 (typ.) d 8.55 8.75 0.336 0.344 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 f 3.8 4.0 0.149 0.157 g 4.6 5.3 0.181 0.208 l 0.5 1.27 0.019 0.050 m 0.68 0.026 s 8 (max.) p013g so-14 mechanical data
74act14 7/8 dim. mm inch min. typ. max. min. typ. max. a 1.1 0.433 a1 0.05 0.10 0.15 0.002 0.004 0.006 a2 0.85 0.9 0.95 0.335 0.354 0.374 b 0.19 0.30 0.0075 0.0118 c 0.09 0.20 0.0035 0.0079 d 4.9 5 5.1 0.193 0.197 0.201 e 6.25 6.4 6.5 0.246 0.252 0.256 e1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 bsc 0.0256 bsc k0 o 4 o 8 o 0 o 4 o 8 o l 0.50 0.60 0.70 0.020 0.024 0.028 c e b a2 a e1 d 1 pin 1 identification a1 l k e tssop14 mechanical data
74act14 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other righ ts of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this pub lication are subject to change without notice. thi s pub lication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authori zed for use as critical components in life suppo rt devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - swit zerland - united kingdom ? http://w ww.st.com


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